Fully used tub DRAM cell

Details Fully used tub DRAM cell Fully used tub DRAM cell

1994-05-31

1995-03-07

Nguyen, Viet Q.

Static information storage and retrieval

Systems using particular element

Semiconductive

437 47, 437 52, 257 71, 257296, 257301, 257303, 257304, 257305, 257306, 257308, 257309, H01L 2704, H01L 2170

Patent

active

053964560

ABSTRACT:
A method is described for forming a dynamic random access memory cell capacitor in which a polysilicon spacer is formed on top of the bottom polysilicon electrode to construct a tub shape and a wet dip is used to remove silicon oxide from cavities under the bottom polysilicon electrode, increasing the overlap with the top polysilicon electrode and thus increasing the surface area of the capacitor without increasing the area on the substrate occupied by the capacitor.

REFERENCES:
patent: 4742018 (1988-05-01), Kimura et al.
patent: 5053351 (1991-10-01), Fazan et al.
patent: 5185282 (1993-02-01), Lee et al.
patent: 5284787 (1994-02-01), Ahn
patent: 5330928 (1994-07-01), Tseng

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