Fully siliciding regions to improve performance

Details Fully siliciding regions to improve performance Fully siliciding regions to improve performance

2007-01-18

2009-06-23

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257SE21266

Reexamination Certificate

active

07550808

ABSTRACT:
Structures and related methods including fully silicided regions are disclosed. In one embodiment, a structure includes a substrate; a partially silicided region located in an active region of an integrated circuit formed on the substrate; a fully silicided region located in a non-active region of the integrated circuit, and wherein the partially and fully silicided regions are formed from a common semiconductor layer.

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