Fully recessed interconnection scheme with titanium-tungsten and

Details Fully recessed interconnection scheme with titanium-tungsten and Fully recessed interconnection scheme with titanium-tungsten and

1989-04-17

1990-10-09

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156655, 156657, 1566591, 1566611, 156662, 357 71, 357 231, 437192, 437203, 437228, 437246, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

049618229

ABSTRACT:
A method of fabricating higher-order metal interconnection layers in a multi-level metal semiconductor device. The semiconductor device has at least one metal layer, an oxide layer disposed on the metal layer, and a metal plug disposed in the oxide layer connected to the metal layer. A reverse photoresist mask is formed on the oxide layer that is etched to form trenches therein that define the higher-order metal layer. An adhesion layer that comprises titanium tungsten or aluminum is deposited on top of the photoresist mask that contacts the metal plug. A low viscosity photoresist layer is then deposited on top of the adhesion layer. The adhesion layer and low viscosity photoresist layer are then anisotropically etched, and the low viscosity photoresist layer is then removed to expose the adhesion layer. Finally, selective metal, such as tungsten or molybdenum, for example, is deposited on top of the adhesion layer in the trench to form the higher-order metal interconnection layer. Subsequent metal levels may be fabricated by repeating the method starting with the steps of depositing the oxide over the formed higher-order metal lines and forming the metal plugs in the oxide layer.

REFERENCES:
patent: 4624864 (1986-11-01), Hartmann
patent: 4666737 (1987-05-01), Gimpelson et al.
patent: 4708767 (1987-11-01), Bril
patent: 4801559 (1989-01-01), Imaoka
patent: 4808545 (1989-02-01), Balasubramanyam et al.

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