Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-24
2009-10-27
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S290000, C257S293000, C438S048000, C438S066000
Reexamination Certificate
active
07608874
ABSTRACT:
An array of fully isolated multi-junction complimentary metal-oxide-semiconductor (CMOS) filterless color imager cells is provided, together with an associated fabrication method. The method provides a bulk silicon (Si) substrate. A plurality of color imager cells are formed, either in the Si substrate, or in a single epitaxial Si layer formed over the substrate. Each color imager cell includes a photodiode set with a first, second, and third photodiode formed as a stacked multi-junction structure. A U-shaped (in cross-section) well liner, fully isolates the photodiode set from adjacent photodiode sets in the array. For example, each photodiode is formed from a p doped Si layer physically interfaced to a first wall. A well bottom physically interfaces to the first wall, and the p doped Si layer of the third, bottom-most, photodiode is part of the well bottom. Then, the photodiode sets may be formed from an n/p
/p
/p or n/p/p−/p/p−/p layered structure.
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Hsu Sheng Teng
Lee Jong-Jan
Tweet Douglas J.
Dang Phuc T
Law Office of Gerald Maliszewski
Maliszewski Gerald
Sharp Laboratories of America Inc.
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