Fully hidden refresh dynamic random access memory

Details Fully hidden refresh dynamic random access memory Fully hidden refresh dynamic random access memory

2005-05-10

2005-05-10

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Data refresh

C365S194000

Reexamination Certificate

active

06891770

ABSTRACT:
Activation/inactivation of an internal normal row activation signal for controlling a memory cell selecting operation is controlled in response to leading and trailing edges of an address transition detection signal. When an internal normal row activating signal is activated, generation of an address transition detection signal is masked by mask circuitry. Conflict between an activating operation and an inactivating operation of the normal row activating signal can be prevented and an internal operation can be performed stably. A refresh-control-free dynamic semiconductor memory device having an interface compatible with a static random access memory and capable of stably performing an internal operation is provided.

REFERENCES:
patent: 5323352 (1994-06-01), Miyata et al.
patent: 5715206 (1998-02-01), Lee et al.
patent: 5822264 (1998-10-01), Tomishima et al.
patent: 6388934 (2002-05-01), Tobita
patent: 6449204 (2002-09-01), Arimoto et al.
patent: 6463002 (2002-10-01), Kim et al.
patent: 6507529 (2003-01-01), Fujimoto et al.
patent: 6590823 (2003-07-01), Tsukude
patent: 6697910 (2004-02-01), Tsukude et al.
patent: 03-05790 (1991-05-01), None
patent: 05-282865 (1993-10-01), None
patent: 11-339468 (1999-12-01), None
“A30-μAData-Retention Pseudostatic RAM with Virtually Static RAM Mode”, K. Sawada et al., IEEE Journal of Solid-State Circuits, vol. 23, No. 1, Feb. 1988, pp. 12-19.
Related U.S. Appl. No. 09/987,895, filed Nov. 16, 2001—(Our Reference No. 57454-291).

Affiliated with

Also associated with

Rating

Fully hidden refresh dynamic random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fully hidden refresh dynamic random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fully hidden refresh dynamic random access memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3427950