Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-05
2005-04-05
Niebling, John F. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S344000, C257S408000
Reexamination Certificate
active
06876037
ABSTRACT:
The present invention is generally directed to a fully-depleted SOI device structure. In one illustrative embodiment, the device comprises first, second and third doped regions formed in the bulk substrate, wherein the dopant concentration level in the doped regions is greater than the dopant concentration in the bulk substrate. The first doped region is substantially aligned with the gate electrode of the device, while the second and third doped regions are vertically spaced apart from the first doped region.
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Fuselier Mark B.
Wei Andy C.
Wristers Derick J.
Advanced Micro Devices , Inc.
Isaac Stanetta
Niebling John F.
Williams Morgan & Amerson P.C.
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