Fully-depleted (FD) (SOI) MOSFET access transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S347000, C257SE27097, C257SE27112

Reexamination Certificate

active

07465999

ABSTRACT:
A fully-depleted (FD) Silicon-on-Insulator (SOI) MOSFET access transistor comprising a gate electrode of a conductivity type which is opposite the conductivity type of the source/drain regions and a method of fabrication are disclosed.

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