Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-19
2006-12-19
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S349000, C257SE27097, C257SE21112
Reexamination Certificate
active
07151303
ABSTRACT:
A fully-depleted (FD) Silicon-on-Insulator (SOI) MOSFET access transistor comprising a gate electrode of a conductivity type which is opposite the conductivity type of the source/drain regions and a method of fabrication are disclosed.
REFERENCES:
patent: 5340759 (1994-08-01), Hsieh et al.
patent: 5536962 (1996-07-01), Pfiester
patent: 6060749 (2000-05-01), Wu
patent: 6277675 (2001-08-01), Tung
patent: 6288949 (2001-09-01), Hidaka et al.
patent: 6294817 (2001-09-01), Srinivasan et al.
patent: 6331458 (2001-12-01), Anjum et al.
patent: 6339244 (2002-01-01), Krivokapic
patent: 6391752 (2002-05-01), Colinge et al.
patent: 6417051 (2002-07-01), Takebuchi
patent: 6424009 (2002-07-01), Ju
patent: 6424016 (2002-07-01), Houston
patent: 6432763 (2002-08-01), Yu
patent: 6452229 (2002-09-01), Krivokapic
patent: 6484065 (2002-11-01), Yu et al.
patent: 6531368 (2003-03-01), Yu
patent: 6548361 (2003-04-01), En et al.
patent: 6552401 (2003-04-01), Dennison
patent: 6653700 (2003-11-01), Chau et al.
patent: 6754104 (2004-06-01), King
patent: 6759706 (2004-07-01), Kobayashi
patent: 6815297 (2004-11-01), Krivokapic et al.
S.M. Sze, “Physics of Semiconductor Devices,” John Wiley & Sons, New York, (1981), pp. 454-455.
Syd R. Wilson, et al., “Handbook of Multilevel Metallization for Integrated Circuits,” Noyes Publ., Westwood, New Jersey, (1993), pp. 259-264.
Gary E. McGuire, “Semiconductor Materials and Process Technology Handbook,” Noyes Publ., Norwich, New York, (1988), pp. 46-47.
Julian J. Sanchez, et al., “Drain-Engineered Hot-Electron-Resistant Device Structures: A Review,” IEEE Trans. On Electron Devices, vol. 36, No. 6, (1989), pp. 1125-1132.
Wang Hongmei
Zahurak John K.
Dickstein & Shapiro LLP
Micro)n Technology, Inc.
Pizarro Marcos D.
Weiss Howard
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