Fully and uniformly silicided gate structure and method for...

Details Fully and uniformly silicided gate structure and method for... Fully and uniformly silicided gate structure and method for...

2011-01-04

2011-01-04

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S683000, C257SE21028, C257SE21199, C257SE21438, C977S892000

Reexamination Certificate

active

07863186

ABSTRACT:
Fully and uniformly silicided gate conductors are produced by deeply “perforating” silicide gate conductors with sub-lithographic, sub-critical dimension, nanometer-scale openings. A silicide-forming metal (e.g. cobalt, tungsten, etc.) is then deposited, polysilicon gates, covering them and filling the perforations. An anneal step converts the polysilicon to silicide. Because of the deep perforations, the surface area of polysilicon in contact with the silicide-forming metal is greatly increased over conventional silicidation techniques, causing the polysilicon gate to be fully converted to a uniform silicide composition. A self-assembling diblock copolymer is used to form a regular sub-lithographic nanometer-scale pattern that is used as an etching “template” for forming the perforations.

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