Full-wafer processing of laser diodes with cleaved facets

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437126, 437226, 148DIG28, H01L 2120

Patent

active

052847926

ABSTRACT:
A method for full-wafer processing of laser diodes with cleaved facets combining the advantages of full-wafer processing, to date known from processing lasers with etched facets, with the advantages of cleaved facets. The steps being: defining the position of the facets to be cleaved by scribing marks into the top surface of a laser structure comprising epitaxially grown layers, these scribed marks being perpendicular to the optical axis of the lasers to be made, the scribed marks being parallel, their distance (l.sub.c) defining the length of the laser cavities and the distance (l.sub.b) between the facets of neighboring laser diodes; and covering the uppermost portion with an etch mask pattern which provides for etch windows between the scribed marks defining the position of facets of neighboring lasers; and etching trenches into an upper portion of the structure defined by the etch windows; and partly underetching the upper portion during a second etch step such that the laser facets can be defined by cleaving the upper portion along the scribed marks without cleaving the whole laser structure; and ultrasonically or mechanically cleaving the upper portions being underetched along the scribed marks; and separating the laser diodes by cleaving them between neighboring lasers.

REFERENCES:
patent: 4044937 (1977-08-01), Hill et al.
patent: 4758532 (1988-07-01), Yagi et al.
patent: 4814296 (1989-03-01), Jedlicka et al.
patent: 4961821 (1990-10-01), Drake et al.
patent: 5024970 (1991-06-01), Mori
patent: 5047364 (1991-09-01), Hattori
patent: 5128282 (1992-07-01), Ormond et al.
patent: 5196378 (1993-03-01), Bean et al.
H. Blauvelt et al., "AlGaAs Lasers with Micro-Cleaved Mirrors Suitable for Monolithic Integration", Applied Physics Letters, vol. 0, No. 4, Feb. 1989, pp. 289-290.
K. Hikosaka et al., "Selective Dry Etching of AlGaAs-GaAs Heterojunction", Japanese Journal of Applied Physics, vol. 20, No. 11, Nov. 1981, pp. L847-L850.
K. L. Seaward et al., "An Analytical Study of Etch-Stop Reactions for GaAs on AlGaAs in CCl.sub.2 F.sub.2 Plasma", Journal of Applied Physics, vol. 61, No. 6, Mar. 1987, pp. 2358-2364.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Full-wafer processing of laser diodes with cleaved facets does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Full-wafer processing of laser diodes with cleaved facets, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Full-wafer processing of laser diodes with cleaved facets will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-697544

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.