Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1990-10-09
1992-03-10
Hudspeth, David
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307443, 307570, H03K 1901
Patent
active
050952293
ABSTRACT:
A full-swing BiCMOS driver comprising an inverter for inverting an input signal, which includes two pairs of NMOS and PMOS transistors to invert an input signal and to prevent current leakage, a full-down controlling part for providing control signals, an output driving part for providing an output, and a delay-inverter for delaying and inverting the input signal which includes a delay part having two transmission gates to serve as resistors. According to the present invention, a full-swing BiCMOS driver which provides a full-swing logic value and prevents any additional power consumption by means of the delaying inverter.
REFERENCES:
patent: 4845385 (1989-07-01), Ruth, Jr.
patent: 4871928 (1989-10-01), Bushey
patent: 4877980 (1989-10-01), Kubinec
patent: 5001365 (1991-03-01), Murabayashi et al.
patent: 5010257 (1991-04-01), Boudon et al.
Lin et al., "Complementary MOS-Bipolar Transistor Structure", IEEE T.E.L.D., vol. ED-16, No. 11, Nov. 1969.
Choe Myung J.
Yun Byung W.
Hudspeth David
Samsung Electronics Co,. Ltd.
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