Full spectrum endpoint detection

Details Full spectrum endpoint detection Full spectrum endpoint detection

2005-11-29

2005-11-29

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S014000, C438S016000, C438S017000, C438S706000, C438S710000

Reexamination Certificate

active

06969619

ABSTRACT:
A method of endpoint detection during plasma processing of a semiconductor wafer comprises processing a semiconductor wafer using a plasma, detecting radiation emission from the plasma during the semiconductor processing, and tracking data points representing changes in spectra of the radiation as a function of time during the semiconductor processing. At any point prior to or during processing a plurality of profiles are provided, each profile representing a different processing condition affecting detection of the desired plasma processing endpoint of the semiconductor wafer. After selecting a desired profile, a first set of parameters are input, representing simplified values for determining when changes in spectra of the radiation indicate that plasma processing of the semiconductor wafer reaches a desired endpoint. The selected profile converts the input first set of parameters into a larger, second set of parameters, and then applies the second set of parameters to an algorithm that converts data points from the spectra of the radiation as a function of time into an endpoint curve. The method then uses the algorithm to track changes in spectra of the radiation as a function of time and determine when plasma processing of the semiconductor wafer reaches a desired endpoint.

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