Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2006-04-07
2009-02-03
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S779000, C257S781000, C257SE21176
Reexamination Certificate
active
07485948
ABSTRACT:
A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
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patent: 6825564 (2004-11-01), Gleason et al.
patent: 6946347 (2005-09-01), Gilton
patent: 2004/0036137 (2004-02-01), Gleason et al.
patent: 2004/0232551 (2004-11-01), Moore et al.
patent: 2005/0020069 (2005-01-01), Gleason et al.
patent: 2005/0194255 (2005-09-01), Tiwari
patent: 2006/0022352 (2006-02-01), Moore et al.
Brooks Joseph F.
Moore John
Dickstein & Shapiro LLP
Le Dung A.
Micro)n Technology, Inc.
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