Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-05
2007-06-05
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S672000, C438S700000, C257S758000
Reexamination Certificate
active
10902569
ABSTRACT:
A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
REFERENCES:
patent: 6825564 (2004-11-01), Gleason et al.
patent: 6946347 (2005-09-01), Gilton
patent: 2004/0036137 (2004-02-01), Gleason et al.
patent: 2005/0194255 (2005-09-01), Tiwari
patent: 2006/0022352 (2006-02-01), Moore et al.
Brooks Joseph F.
Moore John
Dickstein & Shapiro LLP
Le Dung A.
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