Frequency-domain analysis of RHEED data

Details Frequency-domain analysis of RHEED data Frequency-domain analysis of RHEED data

1990-09-14

1992-06-16

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156612, 156DIG102, 156DIG103, 118716, 118719, 422105, 437105, C30B 2516

Patent

active

051222221

ABSTRACT:
Computerized acquisition and frequency-domain analysis of dynamic reflection high-energy electron diffraction (RHEED) intensity data is obtained during growth by molecular-beam epitaxy (MBE). Rapid, accurate determination of the frequency of RHEED oscillations can be obtained not only when these oscillations are well resolved, but also when the growth conditions yield oscillations that are too poorly resolved to permit frequency analysis by conventional procedures. The method has been used to study transients in the growth of AlGaAs on GaAs substrates and also to investigate the hetero-epitaxial growth of GaAs on Si.

REFERENCES:
patent: 4508590 (1985-04-01), Kaplan et al.
patent: 4636268 (1987-01-01), Tsang
patent: 4806321 (1989-02-01), Nishizawa et al.
patent: 4812650 (1989-03-01), Eckstein et al.
patent: 4855013 (1989-08-01), Ohta et al.
patent: 4878989 (1989-11-01), Purdes
"Multiple Reflection High-Energy Electron Diffraction Beam Intensity Measurement System", Resh et al., Rev. Sci. Instrum. 61(2), Feb. 1990, pp. 771-774.

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