Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2007-05-01
2007-05-01
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S421000, C438S666000, C257SE21573, C257SE21581, C257SE21585
Reexamination Certificate
active
09567337
ABSTRACT:
A dielectric wiring structure and method of manufacture therefor. The wiring structure includes air dielectric formed in a hemisphere. The wiring structure also includes, in embodiments, a method of simultaneously forming a MEMS structure with a transistor circuit using substantially the same steps. The MEMS structure of this embodiment includes freestanding electrodes which are not fixed to the substrate.
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Abate Joseph P.
Greenblum & Bernstein PLC
Lindsay, Jr. Walter
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