Freestanding multiplayer IC wiring structure

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation

Reexamination Certificate

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C438S421000, C438S666000, C257SE21573, C257SE21581, C257SE21585

Reexamination Certificate

active

09567337

ABSTRACT:
A dielectric wiring structure and method of manufacture therefor. The wiring structure includes air dielectric formed in a hemisphere. The wiring structure also includes, in embodiments, a method of simultaneously forming a MEMS structure with a transistor circuit using substantially the same steps. The MEMS structure of this embodiment includes freestanding electrodes which are not fixed to the substrate.

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