Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2005-02-18
2008-05-27
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C977S742000
Reexamination Certificate
active
07378715
ABSTRACT:
A method and associated structure for forming a free-standing electrostatically-doped carbon nanotube device is described. The method includes providing a carbon nanotube on a substrate in such a way as to have a free-standing portion. One way of forming a free-standing portion of the carbon nanotube is to remove a portion of the substrate. Another described way of forming a free-standing portion of the carbon nanotube is to dispose a pair of metal electrodes on a first substrate portion, removing portions of the first substrate portion adjacent to the metal electrodes, and conformally disposing a second substrate portion on the first substrate portion to form a trench.
REFERENCES:
patent: 6423583 (2002-07-01), Avouris et al.
patent: 2002/0001934 (2002-01-01), Joo et al.
patent: 2002/0173083 (2002-11-01), Avouris et al.
patent: 2004/0043527 (2004-03-01), Bradley et al.
patent: 2004/0118448 (2004-06-01), Scher et al.
patent: 2006/0226550 (2006-10-01), Dai et al.
patent: 2006/0252853 (2006-11-01), Ajayan et al.
Al Javey et al.—HighK-Dielectrics for Advanced Carbon-Nanotube Transistors and Logic Gates, Nature Materials, Nov. 17, 2002.
Bright-Band Gap Photoluminescence from Unprocessed Single-Walled Carbon Nanotubes—Lefebvre, et al.. The American Physical Society.—pp. 217401-217401-4—May 2003.
Carbon Nanotube P-n Junction Diodes—Lee et al—American Institute of Physics—pp. 145147—Jul. 2004.
Brueske Curtis B.
Dang Trung
General Electric Company
Powell, III William E.
LandOfFree
Free-standing electrostatically-doped carbon nanotube device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Free-standing electrostatically-doped carbon nanotube device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Free-standing electrostatically-doped carbon nanotube device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3987082