Fram, fram card, and card system using the same

Details Fram, fram card, and card system using the same Fram, fram card, and card system using the same

1998-02-04

1999-04-06

Yoo, Do Hyun

Static information storage and retrieval

Systems using particular element

Ferroelectric

365 65, 365226, G11C 1122

Patent

active

058927069

ABSTRACT:
Circuitry within a ferroelectric memory prevents inversion of the polarization of ferroelectric memory cells caused by a power on reset signal to avoid corruption of data stored therein. A ferroelectric memory includes a memory cell array, a plurality of word lines commonly connected to the gates of the cell transistors in the same row, a plurality of plate lines commonly connected to the plates of the cell capacitors in the same row, a plurality of bit lines commonly connected to one end of the cell transistors in the same row, and a power on reset circuit for generating a power on reset signal of a predetermined level for a predetermined period of time after the power supply is turned on. An erroneous programming prevention circuit within the memory includes a plurality of switching transistors connected between all of the bit lines and plate lines and a plurality of nodes at a predetermined potential. The switching transistors are controlled by the power on reset signal so that they are on for a predetermined period of time.

REFERENCES:
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patent: 5515312 (1996-05-01), Nakakuma et al.
patent: 5615144 (1997-03-01), Kimura et al.
S. Sheffield Easton, et al., "A Ferroelectric Nonvolatile Memory," Session X: Nonvolatile Memories, ISSCC Digest of Technical papers, pp. 130-131, Feb. 1988.

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