Four transistor static RAM cell

Details Four transistor static RAM cell Four transistor static RAM cell

1989-08-07

1991-05-28

Clawson, Jr., Joseph E.

Static information storage and retrieval

Systems using particular element

Flip-flop

357 42, G11C 11403

Patent

active

050200283

ABSTRACT:
A static RAM cell includes a first pair of transistors, which act as pass or switching transistors during a read or write operation, and as loads during a refresh operation, and a second pair of current sink transistors connected as a cross-coupled flip-flop and connected to the first pair of transistors. The operation of the memory cell transistors during read and write and refresh operations is controlled by different levels of a control signal applied to their respective control terminals, whereby refreshing does not affect reading or writing of data from or into the SRAM cell.

REFERENCES:
patent: 3949383 (1976-04-01), Askin et al.
patent: 3949385 (1976-04-01), Sonoda
patent: 4023149 (1977-05-01), Bormann et al.
patent: 4796227 (1989-01-01), Lyon et al.
patent: 4839863 (1989-06-01), Soneda
patent: 4858195 (1989-08-01), Soneda

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