Four transistor SRAM cell

Details Four transistor SRAM cell Four transistor SRAM cell

1997-09-25

1999-05-25

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257536, 257537, H01L 2976, H01L 2701, H01L 2900

Patent

active

059071753

ABSTRACT:
A device structure comprising a resistor in a via opening between adjacent levels of metallization of a conventional field effect transistor (FET) by disposing amorphous (.alpha.) silicon between metal barrier layers, such as titanium tungsten and titanium nitride, at the via opening which is filled with a conductive material, such as tungsten, the device structure enabling a conventional FET and the resistor to only take the space of a conventional FET due to the unique properties of .alpha.-silicon.

REFERENCES:
patent: 4924295 (1990-05-01), Kiiecher
patent: 5182225 (1993-01-01), Matthews
patent: 5530418 (1996-06-01), Hsu et al.

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