Four-terminal semiconductor device

Details Four-terminal semiconductor device Four-terminal semiconductor device

1993-05-11

1997-03-04

Westin, Edward P.

Electronic digital logic circuitry

Threshold

With field-effect transistor

326121, H03K 1923, H03K 19094

Patent

active

056083408

ABSTRACT:
A semiconductor device of this invention comprises on a substrate a first semiconductor region of one conductive type, first source and drain regions of the opposite conductive type formed in said semiconductor region, a first gate electrode formed in a region separating said source and drain regions, the first gate electrode being electrically floating through an insulating film, and at least two second gate electrodes connected to said first gate electrode by capacitive coupling, wherein an inversion layer is formed under said first gate electrode and said first source and drain regions are electrically connected together only when a predetermined threshold value is exceeded by the absolute value of a value obtained by linearly summing up the weighted voltages applied to said second gate electrodes.

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