Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-11
2006-07-11
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S209000, C977S708000, C977S932000
Reexamination Certificate
active
07075141
ABSTRACT:
A four terminal non-volatile transistor device. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A floating gate structure is made of at least one of semiconductive or conductive material and is disposed over the channel region. A control gate is made of at least one of semiconductive or conductive material and is in electrical communication with a respective terminal. An electromechanically-deflectable nanotube switching element is in electrical communication with one of the floating gate structure and the control gate structure, and is positioned to be electromechanically deflectable into contact with the other of the floating gate structure and the control gate structure. When the nanotube switching element is in communication with both the control gate and the floating gate, the control gate may be used to modulate the conductivity of the channel region. The nanotube switching element may be formed from a porous fabric of a monolayer of single-walled carbon nanotubes. Under certain embodiments, the nanotube article is suspended vertically in relation to the horizontal substrate. Under certain embodiments, a release gate and release node are positioned in spaced relation to the nanotube switching element, and, in response to a signal on the release node, the release gate electromechanically deflects the nanotube switching element out of contact with the one of the control gate and floating gate. Under certain embodiments, the contact between the nanotube switching element and the one of the control gate and floating gate is a non-volatile state. Under certain embodiments, the device occupies an area of 8F2.
REFERENCES:
patent: 3448302 (1969-06-01), Shanefield
patent: 4845533 (1989-07-01), Pryor et al.
patent: 4853893 (1989-08-01), Eaton et al.
patent: 4876667 (1989-10-01), Ross et al.
patent: 4888630 (1989-12-01), Paterson
patent: 5198994 (1993-03-01), Natori
patent: 6044008 (2000-03-01), Choi
patent: 6128214 (2000-10-01), Kuekes et al.
patent: 6159620 (2000-12-01), Heath et al.
patent: 6183714 (2001-02-01), Smalley et al.
patent: 6198655 (2001-03-01), Heath et al.
patent: 6221330 (2001-04-01), Moy et al.
patent: 6232706 (2001-05-01), Dai et al.
patent: 6445006 (2002-09-01), Brandes et al.
patent: 6518156 (2003-02-01), Chen
patent: 6548841 (2003-04-01), Frazier et al.
patent: 6559468 (2003-05-01), Kuekes et al.
patent: 6574130 (2003-06-01), Segal et al.
patent: 6643165 (2003-11-01), Segal et al.
patent: 6673424 (2004-01-01), Lindsay
patent: 6706402 (2004-03-01), Rueckes et al.
patent: 6750471 (2004-06-01), Bethune et al.
patent: 6759693 (2004-07-01), Vogeli et al.
patent: 6774052 (2004-08-01), Vogeli et al.
patent: 6781166 (2004-08-01), Lieber et al.
patent: 6784028 (2004-08-01), Rueckes et al.
patent: 6803840 (2004-10-01), Hunt et al.
patent: 6809465 (2004-10-01), Jin
patent: 6919592 (2005-07-01), Segal et al.
patent: 2002/0130311 (2002-09-01), Lieber et al.
patent: 2002/0130353 (2002-09-01), Lieber et al.
patent: 2002/0172963 (2002-11-01), Kelley et al.
patent: 2002/0179434 (2002-12-01), Dai et al.
patent: 2003/0021966 (2003-01-01), Segal et al.
patent: 2003/0124325 (2003-07-01), Rueckes et al.
patent: 2003/0124837 (2003-07-01), Rueckes et al.
patent: 2003/0165074 (2003-09-01), Segal et al.
patent: 2003/0199172 (2003-10-01), Rueckes et al.
patent: 2003/0234407 (2003-12-01), Vogeli et al.
patent: 2003/0236000 (2003-12-01), Vogeli et al.
patent: 2004/0085805 (2004-05-01), Segal et al.
patent: 2004/0159833 (2004-08-01), Rueckes et al.
patent: 2004/0164289 (2004-08-01), Rueckes et al.
patent: 2004/0175856 (2004-09-01), Jaiprakash et al.
patent: 2004/0181630 (2004-09-01), Jaiprakash et al.
patent: 2004/0191978 (2004-09-01), Rueckes et al.
patent: 2004/0214366 (2004-10-01), Segal et al.
patent: 2004/0214367 (2004-10-01), Segal et al.
patent: 2005/0041465 (2005-02-01), Rueckes et al.
patent: 2005/0041466 (2005-02-01), Rueckes et al.
patent: 2005/0056877 (2005-03-01), Rueckes et al.
patent: WO 01/03208 (2001-01-01), None
patent: WO 01/44796 (2001-06-01), None
patent: WO 03/091486 (2003-11-01), None
patent: WO 04/065655 (2004-08-01), None
patent: WO 04/065657 (2004-08-01), None
patent: WO 04/065671 (2004-08-01), None
Choi, W.B. et al., “Carbon-nanotube-based nonvolatile memory with oxide-nitride-film and nanoscale channel,”Appl. Phys. Lett., 2003, vol. 82(2), pp. 275-277.
Dequesnes, M. et al., “Calculation of pull-in voltages for carbon-nanotube-based nanoelectromechanical switches,”Nanotechnology, 2002, vol. 13, pp. 120-131.
Dequesnes, M. et al., “Simulation of carbon nanotube-based nanoelectromechanical switches,”Computational Nanoscience and Nanotechnology, 2002, pp. 383-386.
Wolf, S., Silicon Processing for the VLSI Era; vol. II—Manufacturing Yield and Reliability Issues of VLSI Interconnects, 1991, Lattice Press, Sunset Beach, pp. 260-273.
Wolf, S., Multilevel-Interconnect Technology for VLSI and ULSI, 1990, Lattice Press, Sunset Beach, pp. 189-191.
Tour, J. M. et al., “NanoCell Electronic Memories,”J. Am. Chem. Soc., 2003, vol. 125, ppl 13279-13283.
Rueckes, T., et al., “Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing”Science, 2000, vol. 289, pp. 94-97.
Fan, S. et al., “Carbon nanotube arrays on silicon substrates and their possible application,”Physica E, 2000, vol. 8, pp. 179-183.
Zhan, W. et al., “Microelectrochemical Logic Circuits,”J. Am. Chem. Soc., 2003, vol. 125, pp. 9934-9935.
Soh, H. T. et al., “Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes,”Appl. Phys. Lett., 1999. vol. 75(5), pp. 627-629.
Kinaret, J.M. et al., “A carbon-nanotube-based nanorelay”,Appl. Phys. Lett., 2003, vol. 82(8), pp. 1287-1289.
Franklin, N. R. et al., “Integration of suspended carbon nanotube arrays into electronic devices and electromechanical systems,”Appl. Phys. Lett., 2002,vol. 81(5), pp. 913-915.
Avouris, Ph., “Carbon nanotube electronics,” Chem. Physics, 2002, vol. 281, pp. 429-445.
Dai, H. et al., “Controlled Chemical Routes to nanotube Architectures, Physics, and Devices,”J. Phys. Chem. B, 1999. vol. 103, pp. 111246-11255.
Homma, Y. et al., “Growth of Suspended Carbon Nanotubes Networks on 100-nm-scale Silicon Pillars,”Appl. Phys. Lett., 2002, vol. 81(12), pp. 2261-2263.
Ajayan, P.M., et al., “Nanometre-size tubes of carbon,”Rep. Prog. Phys., 1997. vol. 60, pp. 1025-1062.
Sreekumar, T.V., et al., “Single-wall Carbon Nanotube Films”,Chem. Mater. 2003, vol. 15, pp. 175-178.
Verissimo-Alves, M. et al., “Electomechanical effects in carbon nanotubes:Ab initioand analytical tight-binding calculations,”Phys. Rev. B, 2003, vol. 67, pp. 161401-1-161401-4.
Fuhrer, M.S. et al., “High-Mobility Nanotube Transistor Memory,”Nano Letters, 2002, vol. 2(7), pp. 755-759.
Radosavljevic, M. et al., “Nonvolatile molecular memory elements based on ambipolar nanotube field effect transistors,”Nano Letters, 2002, vol. 2(7), pp. 761-764.
Farajian, A. A. et al., “Electronic transport through bent carbon nanotubes: Nanoelectromechanical sensors and switches,”Phys. Rev. B, 2003, vol. 67, pp. 205423-1-205423-6.
Fischer, J.E. et al., “Magnetically aligned single wall carbon nanotube films: Preferred orientation and anisotropic transport properties,”Journal of Appl. Phys., 2003, vol. 93(4), pp. 2157-2163.
Lee, K.H. et al., “Control of growth orientation for carbon nanotubes,”Appl. Phys. Lett., 2003, vol. 82(3), pp. 448-450.
Casavant, M.J. et al., “Neat macroscopic membranes of aligned carbon nanotubes,”Journal of Appl. Phys., 2003, vol. 93(4), pp. 2153-2156.
Ami, S. et al., “
Bertin Claude L.
Brock Darren K.
Jaiprakash Venkatachalam C.
Rueckes Thomas
Segal Brent M.
Estrada Michelle
Nantero Inc.
Wilmer Cutler Pickering Hale and Dorr LLP
LandOfFree
Four terminal non-volatile transistor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Four terminal non-volatile transistor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Four terminal non-volatile transistor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3608938