Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-11-23
1996-08-06
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257336, 257337, 257339, 257341, 257360, H01L 2976, H01L 2994
Patent
active
055436455
ABSTRACT:
A MOS-type vertical power transistor formed in a semiconductor layer having a bottom surface which constitutes a first electrode and a top surface, the transistor further includes a large number of identical cells that are connected in parallel with a second electrode and a control electrode formed on the top surface. The power transistor includes at least one additional cell, formed in the semiconductor layer, having the same shape as the identical cells but a smaller lateral size than the identical cells, and a circuit to turn on the power transistor when the additional cell reaches an avalanche mode.
REFERENCES:
patent: 5045902 (1991-09-01), Bancal
patent: 5119162 (1992-06-01), Todd et al.
patent: 5136349 (1992-08-01), Yilmaz et al.
patent: 5296723 (1994-03-01), Nobe et al.
Patent Abstracts of Japan, vol. 14, No. 362, (E-960), Aug. 6, 1990 & JP-4-21 28 474 (NEC), May 16, 1990.
Barret Jean
Quessada Daniel
Anastasi John N.
Driscoll David M.
Morris James H.
Ngo Ngan V.
SGS-Thomson Microelectronics S.A.
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