Forming thin liquid phase epitaxial layers

Details Forming thin liquid phase epitaxial layers Forming thin liquid phase epitaxial layers

1991-03-18

1993-06-29

Wilczewski, Mary

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437121, 437124, 148DIG101, H01L 21208, C30B 1900, C30B 1906

Patent

active

052230791

ABSTRACT:
A thin layer of liquid phase epitaxial melt material (26) is formed on a wafer (15,16). The thin melt layer (26) is held in contact with the wafer (15,16) while the temperature of the thin melt layer (26) and the wafer (15,16) are reduced to crystallize a portion of the melt material thereby producing thin and accurately controlled epitaxial layers on the wafer (15,16).

REFERENCES:
patent: 3690965 (1972-09-01), Bergh et al.
patent: 3853643 (1974-12-01), Verleur
patent: 3940296 (1976-02-01), van Oirschot et al.
patent: 4028148 (1977-06-01), Horikoshi
patent: 4160682 (1979-07-01), Esseluhn
patent: 4427464 (1984-01-01), Dutt
Dawson, "High efficiency graded-band-gap Ga.sub.1-x Al.sub.x As light emitting diodes", Journal of Applied Physics, vol. 48, No. 6, Jun. 1977, pp. 2485-2492.

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