Forming strained source drain junction field effect transistors

Details Forming strained source drain junction field effect transistors Forming strained source drain junction field effect transistors

2005-06-28

2005-06-28

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S344000, C257S607000

Reexamination Certificate

active

06911706

ABSTRACT:
By providing a high dose germanium implant and then forming a P-type source/drain extension, a strained source/drain junction may be formed. The strained source/drain junction may be shallower and have lower resistivity in some embodiments.

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