Forming shallow trench isolation without the use of CMP

Details Forming shallow trench isolation without the use of CMP Forming shallow trench isolation without the use of CMP

2006-07-04

2006-07-04

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S700000, C438S745000

Reexamination Certificate

active

07071072

ABSTRACT:
Shallow trench isolation structures are formed without CMP by depositing a thick pad nitride and depositing oxide trench fill material such that: a) the material in the trenches is above the silicon surface by a process margin that allows for removal of trench fill in subsequent front end steps so that the final trench fill level is substantially coplanar with the silicon; and b) the oxide on the interior walls is easily removed, so that the pad nitride is removed in a wet etch.

REFERENCES:
patent: 4863556 (1989-09-01), Reichert
patent: 5902127 (1999-05-01), Park
patent: 6001696 (1999-12-01), Kim et al.
patent: 6110800 (2000-08-01), Chou
patent: 6159822 (2000-12-01), Yang et al.
patent: 6184091 (2001-02-01), Gruening et al.
patent: 6486038 (2002-11-01), Maszara et al.
patent: 6498072 (2002-12-01), Azuma
patent: 6531377 (2003-03-01), Knorr et al.
patent: 6653201 (2003-11-01), Chung
patent: 6709952 (2004-03-01), Lai et al.
patent: 6713385 (2004-03-01), Pipes et al.
patent: 6798038 (2004-09-01), Sato et al.
patent: 2002/0137307 (2002-09-01), Kim et al.
patent: 2002/0155721 (2002-10-01), Wang et al.
patent: 2003/0013271 (2003-01-01), Knorr et al.
patent: 2003/0203595 (2003-10-01), Divakaruni et al.
patent: 2004/0126986 (2004-07-01), Wise et al.
Stanley Wolf, Silicon Processing For The VLSI Era, 1986, Lattice Press, vol. II, pp. 66-67.

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