Forming of deuterium containing nitride spacers and fabrication

Details Forming of deuterium containing nitride spacers and fabrication Forming of deuterium containing nitride spacers and fabrication

1998-01-16

2000-11-14

Bowers, Charles

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

Ionized irradiation

438 38, 438509, 438522, 438530, 438974, 438303, 257607, H01L 21324, H01L 2100

Patent

active

061470147

ABSTRACT:
Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.

REFERENCES:
patent: 3849204 (1974-11-01), Fowler
patent: 3923559 (1975-12-01), Sinha
patent: 4113514 (1978-09-01), Pankove et al.
patent: 4151007 (1979-04-01), Levinstein et al.
patent: 4290825 (1981-09-01), Dearnaley et al.
patent: 4331486 (1982-05-01), Chenevas-Paule et al.
patent: 4620211 (1986-10-01), Baliga et al.
patent: 5059551 (1991-10-01), Chevallier et al.
patent: 5248348 (1993-09-01), Miyachi et al.
patent: 5250446 (1993-10-01), Osawa et al.
patent: 5264724 (1993-11-01), Brown et al.
Ganguly, Gautam and Matsuda, Akihisa, "Light-Induced Defect Densities in Hydrogenated and Deuterated Amorphos Silicon Deposited at Different Substrate Temperatures", The Amer. Physical Soc., vol. 49, No. 16, pp. 10 986-10 990, (Apr. 15, 1994).
Mikkelsen, J.C., Jr., "Secondary Ion Mass Spectrometry Characterization of D.sub.2 O and H.sub.2.sup.18 O Steam Oxidation of Silicon", J. of Electronic Matl's, vol. 11, No. 3, pp. 541-558 (1982).
Myers, S.M. and Richards, P.M., "Interactions of Deuterium With Ion-Irradiated SiO.sub.2 on Si", J. Appl. Phys., vol. 67, No. 9, pp. 4064-4071 (May 1, 1990).
Park, Heungsoo and Helms, C.R., "The Effect of Annealing Treatment on the Distribution of Deuterium in Silicon and in Silicon/Silicon Oxide Systems", J. Electrochem. Soc., vol. 139, No. 7, pp. 2042-2046 (Jul. 1992).
Saks, N.S. and Rendell, R.W., "The Time-Dependence of Post-Irradiation Interface Trap Build-up in Deuterium-Annealed Oxides", IEEE Transactions on Nuclear Science, vol. 39, No. 6, pp. 2220-2229 (Dec. 1992).
Saks, N.S. and Rendell, R.W., "Time-Dependence of the Interface Trap Build-up in Deuterium-Annealed Oxides After Irradiation", Appl. Phys. Lett., vol. 61, No. 25, pp. 3014-3016 (Dec. 21, 1992).
Zavada, J.M., Weiss, B.L., Bradley, I.V., Theys, B., Chevallier, J., Rahbi, R., Addinall, R., Newman, R.C. and Jenkinson, H.A., "Optical Waveguides Formed by Deuterium Passivation of Acceptors in Si Doped p-Type GaAs Epilayers", J. Appl. Phys., vol. 71, No. 9, pp. 4151-4155 (May 1, 1992).

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