Forming of a single-crystal semiconductor layer portion...

Details Forming of a single-crystal semiconductor layer portion... Forming of a single-crystal semiconductor layer portion...

2007-02-09

2009-11-24

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S421000, C438S149000

Reexamination Certificate

active

07622368

ABSTRACT:
A method for forming a single-crystal semiconductor layer portion above a hollowed area, including growing by selective epitaxy on an active single-crystal semiconductor region a sacrificial single-crystal semiconductor layer and a single-crystal semiconductor layer, and removing the sacrificial layer. The epitaxial growth is performed while the active region is surrounded with a raised insulating layer and the removal of the sacrificial single-crystal semiconductor layer is performed through an access resulting from an at least partial removal of the raised insulating layer.

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French Search Report from corresponding French Application No. 06/50474, filed Feb. 10, 2006.

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