Forming nanoscale patterned thin film metal layers

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S158000, C438S586000, C438S608000, C438S616000, C438S666000, C438S669000, C438S670000, C438S671000, C438S674000, C438S677000, C438S685000, C438S686000

Reexamination Certificate

active

06946332

ABSTRACT:
The specification describes a contact printing technique for forming patterns of thin films with nanometer resolution over large areas. The procedure, termed here “nanotransfer printing (nTP)”, relies on tailored surface chemistries for transferring thin films, typically metal films, from the raised regions of a stamp to a substrate when these two elements are brought into intimate physical contact. This technique is purely additive, it is fast (<15 s contact times), and the printing occurs in a single processing step at room temperature in open air. nTP is capable of producing patterns with a wide range of features with sizes down to ˜100 nm, and edge resolution better than 25 nm. Electrical contacts and interconnects have been fabricated for high performance organic thin film transistors (TFTs) and complementary inverter circuits, to demonstrate one of the many potential applications for nTP.

REFERENCES:
patent: 6294401 (2001-09-01), Jacobson et al.
patent: 6410416 (2002-06-01), Dodabalapur et al.
patent: 6596569 (2003-07-01), Bao et al.
patent: 2002/0084252 (2002-07-01), Buchwalter et al.
patent: 2002/0130605 (2002-09-01), Mueller et al.
patent: 2002/0148113 (2002-10-01), Forrest et al.
patent: 2004/0033641 (2004-02-01), Yang et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Forming nanoscale patterned thin film metal layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Forming nanoscale patterned thin film metal layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming nanoscale patterned thin film metal layers will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3399114

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.