Forming method of silicide film

Details Forming method of silicide film Forming method of silicide film

2007-02-13

2007-02-13

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S655000

Reexamination Certificate

active

10900278

ABSTRACT:
A manufacturing method of a semiconductor device includes forming a cobalt film on a silicon substrate on which a diffusion layer is formed, forming a titanium film on the cobalt film using a titanium target having a surface from which a nitride film has previously been removed, forming a titanium nitride film containing titanium on the cobalt film by a reactive sputtering process using a nitrogen gas and the titanium target, and performing an annealing to react the cobalt film with the silicon substrate, thereby accomplishing silicification.

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