Forming method of gate insulating layer and nitrogen density...

Details Forming method of gate insulating layer and nitrogen density... Forming method of gate insulating layer and nitrogen density...

2004-12-30

2008-03-25

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S258000, C257S324000, C257SE21302

Reexamination Certificate

active

07348282

ABSTRACT:
A method of forming a gate insulating layer and nitrogen density measuring method thereof, by which a transistor having enhanced electric characteristics can be fabricated without employing separate ion implantation in a manner of providing parameters for enhancing perfection of the transistor via nitridation measurement. The method includes forming a first oxide layer on a silicon substrate having first to fourth regions defined thereon, patterning the first oxide layer in the first and fourth regions to have a predetermined thickness, and forming a nitride layer on the oxide layer in the third and fourth regions.

REFERENCES:
patent: 6110842 (2000-08-01), Okuno et al.
patent: 6258673 (2001-07-01), Houlihan et al.
patent: 6331492 (2001-12-01), Misium et al.
patent: 6383861 (2002-05-01), Gonzalez et al.
patent: 6734113 (2004-05-01), Cho et al.
patent: 2002/0137287 (2002-09-01), Takebuchi

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