Forming method and forming system for insulation film

Details Forming method and forming system for insulation film Forming method and forming system for insulation film

2008-05-20

2008-05-20

Gurley, Lynne (Department: 2811)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

Having glow discharge electrode gas energizing means

C438S216000, C438S261000, C438S287000, C438S421000, C438S591000, C438S595000, C438S954000, C438S981000, C438S778000, C438S788000, C438S792000

Reexamination Certificate

active

11636695

ABSTRACT:
A gate insulation film (104) of a MISFET (100) is constituted of a silicon oxide film (106), silicon nitride film (107), and high-permittivity film (108). The silicon oxide film (106) and silicon nitride film (107) are formed by microwave plasma processing with a radial line slot antenna.

REFERENCES:
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6072221 (2000-06-01), Hieda
patent: 6158383 (2000-12-01), Watanabe et al.
patent: 6399520 (2002-06-01), Kawakami et al.
patent: 2002/0014666 (2002-02-01), Ohmi et al.
patent: 11293470 (1999-10-01), None
patent: 2000294550 (2000-10-01), None
patent: 2001-160555 (2001-06-01), None
patent: WO 00/01008 (2000-01-01), None
European Search Report dated Oct. 6, 2005 (Three (3) Pages).

Affiliated with

Also associated with

Rating

Forming method and forming system for insulation film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Forming method and forming system for insulation film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming method and forming system for insulation film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3923702