Forming method and a forming apparatus of nanocrystalline...

Details Forming method and a forming apparatus of nanocrystalline... Forming method and a forming apparatus of nanocrystalline...

2006-08-15

2006-08-15

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S779000, C438S762000, C427S588000

Reexamination Certificate

active

07091138

ABSTRACT:
A forming method and a forming apparatus of nanocrystalline silicon structure makes it possible to prepare a nanocrystalline silicon structure at a low temperature to have densely packed silicon crystal grains which are stably terminated and to effectively control the grain size in nanometer scale. A forming method and a forming apparatus of nanocrystalline silicon structure with oxide or nitride termination, carry out a first step of treating a surface of a substrate with hydrogen radical; a second step of depositing silicon crystals having a grain size of 10 nm or less by the thermal reaction of a silicon-containing gas; and a third step of terminating the surface of the silicon crystal with oxygen or nitrogen by using one of oxygen gas, oxygen radical and nitrogen radical.

REFERENCES:
patent: 6706336 (2004-03-01), Kondo et al.
patent: 2000-273450 (2000-10-01), None
patent: 2003-086093 (2003-03-01), None

Affiliated with

Also associated with

Rating

Forming method and a forming apparatus of nanocrystalline... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Forming method and a forming apparatus of nanocrystalline..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming method and a forming apparatus of nanocrystalline... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3704475