Forming low dielectric constant dielectric materials

Details Forming low dielectric constant dielectric materials Forming low dielectric constant dielectric materials

2011-05-03

2011-05-03

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C257S750000, C257S753000

Reexamination Certificate

active

07935627

ABSTRACT:
In some embodiments, a damascene structure may be formed with metal lines separated by a dielectric layer. Portions of the dielectric layer may be ion implanted with carbon and/or inert species to lower selectively the dielectric constant, while leaving the bulk of the dielectric layer unaffected by the implant. As a result, suitably low dielectric constants can be achieved in damascene dielectric layers with sufficient mechanical strength.

REFERENCES:
patent: 2004/0053498 (2004-03-01), Kaji et al.
patent: 2006/0154471 (2006-07-01), Minami
patent: 2007/0152336 (2007-07-01), Lee et al.

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