Forming interconnections for multilevel interconnection metallur

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430318, 430323, 156646, 1566591, 1566611, 156664, 156665, 156666, 156668, 204192D, B05D 306

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044106220

ABSTRACT:
A method for forming feedthrough connections, or via studs, between levels of metallization which are typically formed atop semiconductor substrates. A conductive pattern is formed which includes the first level metallurgy, an etch barrier and the feedthrough metallurgy in the desired first level metallurgical configuration. The via stud metallurgy alone is then patterned, preferably by reactive ion etching, using the etch barrier to prevent etching of the first level metallurgy. An insulator is then deposited around the via studs to form a planar layer of studs and insulator, after which a second level of metallization may be deposited.

REFERENCES:
patent: 3801880 (1974-04-01), Harada et al.
patent: 3923568 (1975-12-01), Bersin
patent: 3951709 (1976-04-01), Jacob
patent: 3985597 (1976-10-01), Zielinski
patent: 3994793 (1976-11-01), Harvilchuck et al.
patent: 4004044 (1977-01-01), Franco et al.
patent: 4007103 (1977-02-01), Baker et al.
patent: 4092442 (1978-05-01), Agnihorti et al.
patent: 4121240 (1978-10-01), Katto
patent: 4172004 (1979-10-01), Alcorn
IBM Tech. Dis. Bul., Esch et al., vol. 9, No. 1, Jun. 1966, p. 6.
IBM Tech. Dis. Bul., Patel, vol. 20, No. 6, Nov. 1977, p. 2201.

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