Forming high-k dielectric layers on smooth substrates

Details Forming high-k dielectric layers on smooth substrates Forming high-k dielectric layers on smooth substrates

2008-01-29

2008-01-29

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S785000, C257SE23132, C257SE23077

Reexamination Certificate

active

10882734

ABSTRACT:
A buffer layer and a high-k metal oxide dielectric may be formed over a smooth silicon substrate. The substrate smoothness may reduce column growth of the high-k metal oxide gate dielectric. The surface of the substrate may be saturated with hydroxyl terminations prior to deposition.

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E. Atsuro et al.,High-K./Metal Gate Cleaning, imec 2004, Leuven, Belgium, pp. 1-50.

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