Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2008-01-29
2008-01-29
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S785000, C257SE23132, C257SE23077
Reexamination Certificate
active
07323423
ABSTRACT:
A buffer layer and a high-k metal oxide dielectric may be formed over a smooth silicon substrate. The substrate smoothness may reduce column growth of the high-k metal oxide gate dielectric. The surface of the substrate may be saturated with hydroxyl terminations prior to deposition.
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Brask Justin K.
Chau Robert S.
Datta Suman
Dewey Gilbert
Doczy Mark L.
Estrada Michelle
Intel Corporation
Trop Pruner & Hu P.C.
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