Forming ESD diodes and BJTs using FinFET compatible processes

Details Forming ESD diodes and BJTs using FinFET compatible processes Forming ESD diodes and BJTs using FinFET compatible processes

2011-06-21

2011-06-21

Smith, Matthew S (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S355000, C257S506000, C257SE23002

Reexamination Certificate

active

07964893

ABSTRACT:
A method of forming an electrostatic discharging (ESD) device includes forming a first and a second semiconductor fin over a substrate and adjacent to each other; epitaxially growing a semiconductor material on the first and the second semiconductor fins, wherein a first portion of the semiconductor material grown from the first semiconductor fin joins a second portion of the semiconductor material grown from the second semiconductor fin; and implanting a first end and a second end of the semiconductor material and first end portions of the first and the second semiconductor fins to form a first and a second implant region, respectively. A P-N junction is formed between the first end and the second end of the semiconductor material. The P-N junction is a junction of an ESD diode, or a junction in an NPN or a PNP BJT.

REFERENCES:
patent: 7173310 (2007-02-01), Voldman et al.
patent: 2004/0188705 (2004-09-01), Yeo et al.
patent: 2008/0185691 (2008-08-01), Cheng et al.
patent: 2008/0242034 (2008-10-01), Mokhlesi et al.
patent: 2009/0075435 (2009-03-01), Vora
Russ, C.C., et al., “ESD Evaluation of the Emerging MuGFET Technology,” IEEE Transactions on Device and Materials Reliability, vol. 7, No. 1, Mar. 2007, pp. 152-161.
Gossner, H., et al., “Novel Devices in ESD Protection,” Physics of Semiconductor Devices, 2007, IWPSD 2007, International Workshop on Dec. 16-20, 2007, pp. 1-6, IEEE.

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