Forming electronic structures having dual dielectric...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S304000

Reexamination Certificate

active

07087948

ABSTRACT:
A structure including a first device and a second device, wherein the second device has a dielectric thickness greater than the dielectric thickness of the first device, and the method of so forming the structure.

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Extending Trench DRAM Technology to 0.15μm Groundrule and Beyond, Rupp et.al., IEDM 99, pp. 33-36.
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A 0.6μm2256Mb Trench DRAM Cell With Self-Aligned BurlEd STrap (BEST), Nesbit et al., IEDM 93, pp. 627-630.

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