Forming dual metal complementary metal oxide semiconductor...

Details Forming dual metal complementary metal oxide semiconductor... Forming dual metal complementary metal oxide semiconductor...

2007-03-20

2007-03-20

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S199000

Reexamination Certificate

active

11037860

ABSTRACT:
Complementary metal oxide semiconductor metal gate transistors may be formed by depositing a metal layer in trenches formerly inhabited by patterned gate structures. The patterned gate structures may have been formed of polysilicon in one embodiment. The trenches may be filled with metal by surface activating using a catalytic metal, followed by electroless deposition of a seed layer followed by superconformal filling bottom up.

REFERENCES:
patent: 6197688 (2001-03-01), Simpson
patent: 2004/0192037 (2004-09-01), Barns
patent: 2005/0245036 (2005-11-01), Datta et al.

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