Forming copper interconnects with Sn coatings

Details Forming copper interconnects with Sn coatings Forming copper interconnects with Sn coatings

2005-04-26

2005-04-26

Clark, S. V. (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S249000

Reexamination Certificate

active

06884720

ABSTRACT:
A copper interconnect with a Sn coating is formed in a damascene structure by forming a trench in a dielectric layer. The trench is formed by electroplating copper simultaneously with a metal dopant to form a doped copper layer. The top level of the doped copper layer is reduced to form a planarized surface level with the surface of the first dielectric layer. The doped copper is annealed to drive the metal dopants to form a metal dopant capping coating at the planarized top surface of the doped copper layer.

REFERENCES:
patent: 6022808 (2000-02-01), Nogami et al.
patent: 6316356 (2001-11-01), Farrar et al.
patent: 6774035 (2004-08-01), Farrar et al.
patent: 6828613 (2004-12-01), Dubin et al.

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