Forming conductive stud for semiconductive devices

Details Forming conductive stud for semiconductive devices Forming conductive stud for semiconductive devices

2011-01-04

2011-01-04

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000, C257SE21437, C257SE21626, C438S303000

Reexamination Certificate

active

07863693

ABSTRACT:
Embodiments of the present invention provide a method of forming a conductive stud contacting a semiconductor device. The method includes forming a protective layer covering the semiconductor device; selectively etching an opening down through the protective layer reaching a contact area of the semiconductor device, the opening being away from a protected area of the semiconductor device; and filling the opening with a conductive material to form the conductive stud. One embodiment may further include forming a dielectric liner directly on top of the semiconductor device, and forming the protective layer on top of the dielectric liner. Embodiments of the present invention also provide a semiconductor device made thereof.

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“Thickness”, Merriam and Webster's Dictionary as of Jan. 11, 2010, http://www.merriam-webster.com/dictionary/Thickness.

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