Forming an intermediate layer in interconnect joints and...

Details Forming an intermediate layer in interconnect joints and... Forming an intermediate layer in interconnect joints and...

2006-08-08

2006-08-08

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S612000, C438S614000

Reexamination Certificate

active

07087521

ABSTRACT:
Methods of forming a microelectronic structure are described. Those methods include forming a first adhesion layer on a conductive layer, forming an intermediate layer on the first adhesion layer, and forming a barrier layer on the intermediate layer, wherein the intermediate layer includes a coefficient of thermal expansion that is approximately between the coefficient of thermal expansion of the first adhesion layer and the coefficient of thermal expansion of the barrier layer.

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R.C. Ellwanger, et al. “An integrated aluminum/CVD-W metallization process for sub-micron contact filling”. 1991 Proc. 8th International IEEE VLSI Multilevel Interconnection Conf. Jun. 11-12, 1991, Santa Clara, CA. pp. 41-50.

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