Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-06-14
2005-06-14
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S724000, C438S734000, C438S735000, C438S738000, C438S739000, C438S743000, C438S744000, C438S755000
Reexamination Certificate
active
06905943
ABSTRACT:
In one embodiment, a method for forming a semiconductor structure in manufacturing a semiconductor device includes providing a pad layer on a surface of a substrate, providing a nitride layer on the pad layer, and providing a sacrificial oxide layer on the nitride layer. In a first etching step, at least the sacrificial oxide and nitride layers are etched to define opposing substantially vertical surfaces of at least the sacrificial oxide and nitride layers. In a second etching step, the nitride layer is etched such that the opposing substantially vertical surfaces of the nitride layer are recessed from the opposing substantially vertical surfaces of the sacrificial oxide layer, the sacrificial oxide layer substantially preventing the nitride layer from decreasing in thickness as a result of the etching of the nitride layer. In a third etching step, the substrate is etched to form a trench extending into the substrate for purposes of defining one or more isolation regions adjacent the trench.
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DeLoach Juanita
Mehrad Freidoon
Trentman Brian M.
Yocum Troy A.
Brady III W. James
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Thomas Toniae M.
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