Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2011-03-08
2011-03-08
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S930000, C257SE27008, C136S203000
Reexamination Certificate
active
07902617
ABSTRACT:
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a first plurality of openings through a first surface of a substrate, forming a p-type TFTEC material within the first plurality of openings, forming a second plurality of openings substantially adjacent to the first plurality of openings through the first surface of the substrate, and then forming an n-type TFTEC material within the second plurality of openings.
REFERENCES:
patent: 6127619 (2000-10-01), Xi et al.
Intel Corporation
Monbleau Davienne
Ortiz Kathy J.
Reames Matthew
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