Forming a semiconductor device having a metal electrode and...

Details Forming a semiconductor device having a metal electrode and... Forming a semiconductor device having a metal electrode and...

2007-01-04

2009-06-09

Toledo, Fernando L. (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S199000, C438S287000, C438S289000, C438S592000, C438S595000, C257SE21444

Reexamination Certificate

active

07544595

ABSTRACT:
A method for forming a semiconductor device includes forming a gate dielectric over a substrate, forming a metal electrode over the gate dielectric, forming a first sacrificial layer which includes polysilicon or a metal over the metal electrode, removing the first sacrificial layer, and forming a gate electrode contact over and coupled to the metal electrode.

REFERENCES:
patent: 5168072 (1992-12-01), Moslehi
patent: 5663578 (1997-09-01), Hsu et al.
patent: 2005024899 (2005-03-01), None

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