Forming a porous dielectric layer and structures formed thereby

Details Forming a porous dielectric layer and structures formed thereby Forming a porous dielectric layer and structures formed thereby

2007-02-20

2007-02-20

Dickey, Thomas (Department: 2826)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S780000, C438S781000

Reexamination Certificate

active

11027104

ABSTRACT:
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a dielectric layer utilizing a plasma, wherein the plasma comprises a porogen and substantially no oxidizing agent, and then applying energy to the dielectric layer, wherein the porogen disposed within the dielectric layer decomposes to form at least one pore.

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Pending U.S. Appl. No. 11/096,678, filed Mar. 31, 2005, Inventor: Kloster et al.

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