Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-01-30
2007-01-30
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE21267
Reexamination Certificate
active
10394104
ABSTRACT:
In one embodiment, the present invention includes introducing a conventional precursor and an organic precursor having an organic porogen into a vapor deposition apparatus; and forming a dielectric layer having the organic porogen on a substrate within the vapor deposition apparatus from the precursors. In certain embodiments, at least a portion of the organic porogen may be removed after subsequent processing, such as dual damascene processing.
REFERENCES:
patent: 5872401 (1999-02-01), Huff et al.
patent: 5950107 (1999-09-01), Huff et al.
patent: 6284149 (2001-09-01), Li et al.
patent: 6312793 (2001-11-01), Grill et al.
patent: 6329118 (2001-12-01), Hussein et al.
patent: 6541398 (2003-04-01), Grill et al.
patent: 6562416 (2003-05-01), Ngo et al.
patent: 2002/0037442 (2002-03-01), Grill et al.
patent: 2002/0137359 (2002-09-01), Grill et al.
patent: 2003/0234450 (2003-12-01), Grill et al.
U.S. Appl. No. 10/337,061, filed Feb. 28, 2003, Meagley et al.
Grill, Alfred. Plasma enhanced chemical vapor deposited SiCOH dielectrics: from low-k to extreme low-k interconnect materials. Journal of Applied Physics, vol. 93, No. 3. Feb. 1, 2003.
Hendricks, Neil H., Ph.D. Innovations in Interconnect Technology. Jul. 16, 2001. http://www.semi.org.
Chapman, Lance. International SEMATECH Fabricates Electrically Yielding 2-Level Metal Copper Dual Damascene Via Chains with NANOGLASS® E Extra Low-k Spin-On Dielectric. Synnyvale, California, Nov. 14, 2001.
Goodner Michael D.
Kloster Grant M.
Meagley Robert P.
Ott Andrew W.
Intel Corporation
Toledo Fernando L.
Trop Pruner & Hu P.C.
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