Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1992-02-13
1994-03-01
Padgett, Marianne
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427 78, 427122, 427249, 427284, 423446, B05D 306, B05D 512, C23C 1600, B01J 306
Patent
active
052906108
ABSTRACT:
Depositing a diamond film on an electron emitting tip including disposing hydrocarbon and etchant reactant gasses together with the tip in a reaction vessel and providing an external voltage source such that electrons, emitted from the electron emitter, disassociate hydrocarbon constituents of the reactant gas. The constituents accelerate toward and are deposited onto the tip and are selectively etched by the etchant constituents such that only the diamond form of the deposited carbon remains.
REFERENCES:
patent: 3259782 (1966-07-01), Shroff
patent: 3947716 (1976-03-01), Fraser, Jr. et al.
patent: 4663183 (1987-05-01), Ovshinsky et al.
patent: 4859490 (1989-08-01), Ikegaya et al.
patent: 4996079 (1991-02-01), Itoh
patent: 5089292 (1992-02-01), MaCaulay et al.
patent: 5093151 (1992-03-01), van der Berg et al.
patent: 5110405 (1992-05-01), Sawabe et al.
patent: 5169452 (1992-12-01), Nakayama et al.
patent: 5176557 (1993-01-01), Okunuki et al.
patent: 5185067 (1993-02-01), Shibahara et al.
Jaskie James E.
Kane Robert C.
Motorola Inc.
Padgett Marianne
Parsons Eugene A.
LandOfFree
Forming a diamond material layer on an electron emitter using hy does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Forming a diamond material layer on an electron emitter using hy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Forming a diamond material layer on an electron emitter using hy will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-575600