Forming a contact in a thin-film device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S668000, C438S951000, C438S508000, C257SE21508

Reexamination Certificate

active

06989327

ABSTRACT:
An aspect of the present invention is a method of forming a contact in a thin-film device. The method includes forming a liftoff stencil, depositing at least one material through the liftoff stencil, removing a portion of the liftoff stencil, forming a re-entrant profile with the remaining portion of the liftoff stencil and depositing a conductor material in contact with the at least one material on the re-entrant profile.

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patent: 5705432 (1998-01-01), Lee et al.
patent: 6002575 (1999-12-01), Kotecki et al.
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patent: 2004/0251524 (2004-12-01), Snyder et al.
“Schottky Barrier Diod Process”, IBM Technical Disclosure Bulletin, Oct. 1979, US, vol. 22, pp1872-1873.
RD337036A, Apr. 1992, Anonymous.
RD288056A, Apr. 1988, Anonymous.

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