Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-01-24
2006-01-24
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S668000, C438S951000, C438S508000, C257SE21508
Reexamination Certificate
active
06989327
ABSTRACT:
An aspect of the present invention is a method of forming a contact in a thin-film device. The method includes forming a liftoff stencil, depositing at least one material through the liftoff stencil, removing a portion of the liftoff stencil, forming a re-entrant profile with the remaining portion of the liftoff stencil and depositing a conductor material in contact with the at least one material on the re-entrant profile.
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Anthony Thomas C.
Lee Heon
Sharma Manish
Fourson George
Hewlett--Packard Development Company, L.P.
Pham Thanh V.
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